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| STB3NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB3NA80 n n n n n n n n V DSS 800 V R DS(on ) < 4.5 ID 3.1 A n TYPICAL RDS(on) = 3.5 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4") 3 12 1 3 I2PAK TO-262 D2PAK TO-263 APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SWITCH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID ID I DM (*) P tot T s tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) T otal Dissipation at T c = 25 C Derating Fact or Storage Temperature Max. O perating Junction Temperature o o Valu e 800 800 30 3.1 2 12.5 100 1.25 -65 to 150 150 Unit V V V A A A W W/ oC o o C C (*) Pulse width limited by safe operating area October 1995 1/10 STB3NA80 THERMAL DATA R thj -ca se R thj- amb R thc-sin k Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead T emperature For Soldering Purpose Max Max Typ 0.8 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbo l I AR E AS E AR I AR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 50 V) Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) Avalanche Current, Repetitive or Not-Repetitive o (T c = 100 C, pulse width limited by T j max, < 1%) Max Valu e 3.1 48 2 2 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage T est Con ditio ns I D = 250 A V GS = 0 Min . 800 250 1000 100 T yp. Max. Unit V A A nA V DS = Max Rating Zero G ate Voltage Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = 30 V T c = 125 oC ON () Symbo l V GS( th) R DS( on) I D(on ) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V V GS = 10V T est Con ditio ns ID = 250 A I D = 1.5 A ID = 1.5 A T c = 100 C 3.1 o Min . 2.25 T yp. 3 3.5 Max. 3.75 4.5 9 Unit V A V DS > I D(on) x R DS(on)max V GS = 10 V DYNAMIC Symbo l g f s () C is s C o ss C r ss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse T ransfer Capacitance T est Con ditio ns V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D = 1.5 A VGS = 0 Min . 1.5 T yp. 3 730 85 20 950 115 30 Max. Unit S pF pF pF 2/10 STB3NA80 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope T est Con ditio ns V DD = 400 V I D = 1.5 A V GS = 10 V R G = 47 (see test circuit, figure 3) V DD = 640 V I D = 3 A V GS = 10 V R G = 47 (see test circuit, figure 5) V DD = 640 V ID = 3 A V GS = 10 V Min . T yp. 25 55 180 Max. 35 75 Unit ns ns A/s Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge 35 6 15 50 nC nC nC SWITCHING OFF Symbo l t r( Voff ) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time T est Con ditio ns V DD = 640 V I D = 3 A R G = 47 V GS = 10 V (see test circuit, figure 5) Min . T yp. 50 15 75 Max. 70 25 100 Unit ns ns ns SOURCE DRAIN DIODE Symbo l I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 3.1 A VGS = 0 700 9.5 27 I SD = 3.1 A di/dt = 100 A/s o Tj = 150 C V DD = 100 V (see test circuit, figure 5) T est Con ditio ns Min . T yp. Max. 3.1 12.5 1.6 Unit A A V ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limi ted by safe operating area Safe Operating Area Thermal Impedance 3/10 STB3NA80 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/10 STB3NA80 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/10 STB3NA80 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform 6/10 STB3NA80 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And DIode Recovery Times 7/10 STB3NA80 TO-262 (I2PAK) MECHANICAL DATA mm MIN. A A1 B B1 B2 C C2 D e E L L1 L2 4.3 2.49 0.7 1.2 1.25 0.45 1.21 9 2.44 10 13.2 3.48 1.27 TYP. MAX. 4.6 2.69 0.93 1.38 1.4 0.6 1.36 9.35 2.64 10.28 13.5 3.78 1.37 MIN. 0.169 0.098 0.027 0.047 0.049 0.017 0.047 0.354 0.096 0.393 0.519 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.054 0.055 0.023 0.053 0.368 0.104 0.404 0.531 0.149 0.054 DIM. A C2 B2 B E L1 L2 D L 8/10 e A1 C STB3NA80 TO-263 (D2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D E G L L2 L3 4.3 2.49 0.7 1.25 0.45 1.21 9 10 4.88 15 1.27 1.4 TYP. MAX. 4.6 2.69 0.93 1.4 0.6 1.36 9.35 10.28 5.28 15.85 1.37 1.75 MIN. 0.169 0.098 0.027 0.049 0.017 0.047 0.354 0.393 0.192 0.590 0.050 0.055 inch TYP. MAX. 0.181 0.106 0.036 0.055 0.023 0.053 0.368 0.404 0.208 0.624 0.054 0.068 DIM. E C2 L2 A D L L3 B2 B G A1 C 9/10 STB3NA80 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequence of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No s license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 10/10 |
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